本書包括半導(dǎo)體器件基礎(chǔ)、二極管及其應(yīng)用電路、雙極性結(jié)型晶體管和場效應(yīng)晶體管放大電路的基本原理及頻率響應(yīng)、功率放大電路、多級(jí)放大電路、差分放大電路、電流源等模擬集成電路的單元電路、反饋電路、模擬集成運(yùn)算放大器、電壓比較器和波形變換電路等內(nèi)容。本書結(jié)合國內(nèi)高等教育中采用英語或雙語教學(xué)的特點(diǎn)和實(shí)際情況，對(duì)原版教材進(jìn)行了改編，精簡了內(nèi)容，突出了重點(diǎn)，補(bǔ)充了必要知識(shí)點(diǎn)，內(nèi)容更加新穎和系統(tǒng)化，反映了半導(dǎo)體器件和應(yīng)用的發(fā)展趨勢，強(qiáng)調(diào)了系統(tǒng)工程的概念。
Robert L. Boylestad和Louis Nashelsky都是在大學(xué)從事電路分析、電子電路基礎(chǔ)等相關(guān)學(xué)科教學(xué)的資深教授，在電子電路學(xué)科領(lǐng)域出版了多部優(yōu)秀教材，受到很高的評(píng)價(jià)。
Robert L. Boylestad和Louis Nashelsky都是在大學(xué)從事電路分析、電子電路基礎(chǔ)等相關(guān)學(xué)科教學(xué)的資深教授，在電子電路學(xué)科領(lǐng)域出版了多部優(yōu)秀教材，受到很高的評(píng)價(jià)。
Chapter 1?Semiconductor Diodes
1.1?Introduction
1.2?Semiconductor Materials: Ge, Si, and GaAs
1.3?Covalent Bonding and Intrinsic Materials
1.4?Extrinsic Materials: n-Type and p-Type Materials
1.5?Semiconductor Diode
1.6?Ideal versus Practical
1.7?Resistance Levels
1.8?Diode Equivalent Circuits
1.9?Transition and Diffusion Capacitance
1.10?Reverse Recovery Time
1.11?Diode Specification Sheets
1.12?Semiconductor Diode Notation
1.13?Zener Diodes
1.14?Light-Emitting Diodes
1.15?Summary
1.16?Computer Analysis
Problems
Chapter 2?Diode Applications
2.1?Introduction
2.2?Load-Line Analysis
2.3?Equivalent Model Analysis
2.4?AND/OR Gates
2.5?Sinusoidal Inputs, Half-Wave Rectification
2.6?Full-Wave Rectification
2.7?Clippers
2.8?Clampers
2.9?Zener Diodes
2.10?Summary
Problems
Chapter 3?Bipolar Junction Transistors
3.1?Introduction
3.2?Transistor Construction
3.3?Transistor Operation
3.4?Common-Base Configuration
3.5?Transistor Amplifying Action
3.6?Common-Emitter Configuration
3.7?Common-Collector Configuration
3.8?Limits of Operation
3.9?Transistor Specification Sheet
3.10?Transistor Casing and Terminal Identification
3.11?Summary
Problems
Chapter 4?DC Biasing —BJTs
4.1?Introduction
4.2?Operating Point
4.3?Fixed-Bias Circuit
4.4?Emitter Bias
4.5?Voltage-Divider Bias
4.6?DC Bias with Voltage Feedback
4.7?Miscellaneous Bias Configurations
4.8?Transistor Switching Networks
4.9?pnp Transistors
4.10?Bias Stabilization
4.11?Summary
Problems
Chapter 5?BJT AC Analysis
5.1?Introduction
5.2?Amplification in the AC Domain
5.3?BJT Transistor Modeling
5.4?The re Transistor Model
5.5?The Hybrid Equivalent Model
5.6?Hybrid π Model
5.7?Variations of Transistor Parameters
5.8?Common-Emitter Fixed-Bias Configuration
5.9?Voltage-Divider Bias
5.10?CE Emitter-Bias Configuration
5.11?Emitter-Follower Configuration
5.12?Common-Base Configuration
5.13?Collector Feedback Configuration
5.14?Collector DC Feedback Configuration
5.15?Determining the Current Gain
5.16?Effect of RL and Rs
5.17?Two-Port Systems Approach
5.18?Summary Table
5.19?Cascaded Systems
5.20?Darlington Connection
5.21?Feedback Pair
5.22?Current Mirror Circuits
5.23?Current Source Circuits
5.24?Approximate Hybrid Equivalent Circuit
5.25?Summary
Problems
Chapter 6?Field-Effect Transistors
6.1?Introduction
6.2?Construction and Characteristics of JFETs
6.3?Transfer Characteristics
6.4?Specification Sheets (JFETs)
6.5?Important Relationships
6.6?Depletion-Type MOSFETs
6.7?Enhancement-Type MOSFETs
6.8?CMOS
6.9?Summary Table
6.10?Summary
Problems
Chapter 7?FET Biasing
7.1?Introduction
7.2?Fixed-Bias Configuration
7.3?Self-Bias Configuration
7.4?Voltage-Divider Biasing
7.5?Depletion-Type MOSFETs
7.6?Enhancement-Type MOSFETs
7.7?Summary Table
7.8?Combination Networks
7.9?p-Channel FETs
7.10?Summary
Problems
Chapter 8?FET Amplifiers
8.1?Introduction
8.2?FET Small-Signal Model
8.3?JFET Fixed-Bias Configuration
8.4?JFET Self-Bias Configuration
8.5?JFET Voltage-Divider Configuration
8.6?JFET Source-Follower (Common-Drain) Configuration
8.7?JFET Common-Gate Configuration
8.8?Depletion-Type MOSFETs
8.9?Enhancement-Type MOSFETs
8.10?E-MOSFET Drain-Feedback Configuration
8.11?E-MOSFET Voltage-Divider Configuration
8.12?Summary Table
8.13?Effect of RL and Rsig
8.14?Cascade Configuration
8.15?Summary
Problems
Chapter 9?BJT and FET Frequency Response
9.1?Introduction
9.2?General Frequency Considerations
9.3?Low-Frequency Analysis — Bode Plot
9.4?Low-Frequency Response — BJT Amplifier
9.5?Low-Frequency Response — FET Amplifier
9.6?Miller Effect Capacitance
9.7?High-Frequency Response — BJT Amplifier
9.8?High-Frequency Response — FET Amplifier
9.9?Multistage Frequency Effects
9.10?Summary
Problems
Chapter 10?Operational Amplifiers
10.1?Introduction
10.2?Differential Amplifier Circuit
10.3?Differential and Common-Mode Operation
10.4?BiFET, BiMOS, and CMOS Differential Amplifier Circuits
10.5?Op-Amp Basics
10.6?Op-Amp Specifications — DC Offset Parameters
10.7?Op-Amp Specifications — Frequency Parameters
10.8?Op-Amp Unit Specifications
10.9?Summary
Problems
Chapter 11?Op-Amp Applications
11.1?Operation Circuits
11.2?Active Filters
11.3?Comparator Unit Operation
11.4?Schmitt Trigger
11.5?Summary
Problems
Chaper 12?Power Amplifiers
12.1?Introduction — Definitions and Amplifier Types
12.2?Series-Fed Class A Amplifier
12.3?Transformer-Coupled Class A Amplifier
12.4?Class B Amplifier Operation
12.5?Class B Amplifier Circuits
12.6?Class C and Class D Amplifiers
12.7?Summary
Problems
Chapter 13?Feedback Circuits
13.1?Feedback Concepts
13.2?Feedback Connection Types
13.3?Practical Feedback Circuits
13.4?Feedback Amplifier — Phase and Frequency Considerations
13.5?Summary
書單推薦
