本書梳理和總結了中國科學院院士、半導體材料及材料物理學家王占國院士近60年從事半導體材料領域科研活動的歷程。主要包括王占國院士生活和工作的珍貴照片、有代表性的研究論文、科研和工作事跡、回憶文章、獲授獎項以及育人情況等內(nèi)容。王占國院士是我國著名的半導體材料及材料物理學家，對推動我國半導體材料科學領域的學術繁榮、學科發(fā)展、技術創(chuàng)新、產(chǎn)業(yè)振興以及人才培養(yǎng)做出了重要貢獻。
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目錄
序
第一篇 自傳
幼年時光 3
插曲 7
初入小學 8
遠足與講演 10
夜“逃”紅軍 11
嶄新的小學生活 12
侯集鎮(zhèn)的3 年初中生活 14
夜驚 15
雪夜宿房營 16
入伙 18
緊張有趣的課外活動 19
南陽第二高中 20
只身北上南開求學 23
膽戰(zhàn)心驚的高等數(shù)學課 26
共產(chǎn)主義暑假 27
毛主席視察南開大學 28
3 年困難時期的大學生活 29
早期科研工作概述 33
什剎海黑夜救同事 37
天津小站勞動鍛煉 38
1978 年中國物理學會年會趣事 40
變溫霍爾系數(shù)測量系統(tǒng)建設 41
留學瑞典隆德大學固體物理系 42
1984 年回國后的研究工作 45
第二篇 論著選編
硅的低溫電學性質(zhì) 49
Evidence that the gold donor and acceptor in silicon are two levels of the same defect 57
Optical properties of iron doped AlxGa1-xAs alloys 62
Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs 73
Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx 89
Acceptor associates and bound excitons in GaAs：Cu 95
Localization of excitons to Cu-related defects in GaAs 116
Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs 128
混晶半導體中深能級的展寬及其有關效應 140
Electronic properties of an electron-attractive complex neutral defect in GaAs 151
硅中金施主和受主光電性質(zhì)的系統(tǒng)研究 158
A novel model of “new donors” in Czochralski-grown silicon 169
Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment 177
SI-GaAs 單晶熱穩(wěn)定性及其電學補償機理研究 185
Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures 195
Simulation of lateral confinement in very narrow channels 201
Theoretical investigation of the dynamic process of the illumination of GaAs 209
Effect of image forces on electrons confined in low-dimensional structures under a magnetic field 222
Photoluminescence studies of single submonolayer InAs structures grown on GaAs(001)matrix 234
Influence of DX centers in the Alx Ga1-x As barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs / AlGaAs modulation-doped heterostructure 240
Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells 247
Ordering along ？111？ and ？100？ directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 252
Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer 259
Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions 264
808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 269
Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs 275
半導體材料的現(xiàn)狀和發(fā)展趨勢 283
Effects of annealing on self-organized InAs quantum islands on GaAs(100) 285
Wurtzite GaN epitaxial growth on a Si(001)substrate using γ-Al2O3 as an intermediate layer 291
High-density InAs nanowires realized in situ on(100)InP 298
High power continuous-wave operation of self-organized In(Ga)As / GaAs quantum dot lasers 304
Quantum-dot superluminescent diode： A proposal for an ultra-wide output spectrum 306
Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices 317
High-performance strain-compensated InGaAs / InAlAs quantum cascade lasers 322
Research and development of electronic and optoelectronic materials in China 328
半導體量子點激光器研究進展 339
High-power and long-lifetime InAs / GaAs quantum-dot laser at 1080nm 349
Self-assembled quantum dots， wires and quantum-dot lasers 355
Controllable growth of semiconductor nanometer structures 365
Effect of In0. 2Ga0. 8As and In0. 2Al0. 8As combination layer on band offsets of InAs quantum dots 372
信息功能材料的研究現(xiàn)狀和發(fā)展趨勢 380
High-performance quantum-dot superluminescent diodes 395
Time dependence of wet oxidized AlGaAs / GaAs distributed Bragg reflectors 400
Materials science in semiconductor processing 407
半導體照明將觸發(fā)照明光源的革命 409
Study of the wetting layer of InAs / GaAs nanorings grown by droplet epitaxy 415
Broadband external cavity tunable quantum dot lasers with low injection current density 422
Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 432
19μm quantum cascade infrared photodetectors 442
High-performance operation of distributed feedback terahertz quantum cascade lasers 450
Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells 456
Room temperature continuous wave quantum dot cascade laser emitting at 7.2μm 474
第三篇 學術貢獻
忍受輻照傷痛，換來我國空間用硅太陽電池的定型投產(chǎn) 489
挑戰(zhàn)國際權威，澄清GaAs 和硅中深能級物理本質(zhì) 491
“863”十年，掌舵我國新型半導體材料與器件發(fā)展 494
任“S-863”專家組長，開展新材料領域戰(zhàn)略研究 498
任咨詢組組長，為“973”材料領域發(fā)展做出重要貢獻 499
開拓創(chuàng)新，解決“信息功能材料相關基礎問題” 501
推動材料基礎研究，實施光電信息功能材料重大研究計劃 503
第四篇 回憶
半導體材料科學實驗室的籌建與初期發(fā)展歷程回顧 507
深情厚誼，歷久彌堅 509
王占國院士科研事跡回顧 511
一段往事 514
王占國院士支持南昌大學GaN 研究記事 515
我生命中的貴人 517
賀王占國老師80 壽辰 519
往事點滴 521
在王占國導師身邊的日子 523
我們的大導師王占國院士 526
我眼中的王占國院士 528
德高望重，仰之彌高 529
超寬禁帶半導體材料研究組發(fā)展歷程 531
高山仰止 心念恩師 533
師道山高 535
人生楷模 學習的榜樣 537
諄諄教誨 潤物無聲 539
桃李遍天下 541
記與王老師交往的二三事 544
第五篇 附錄
個人簡歷 549
大事記 550
學術交流目錄 555
獲獎目錄 563
論著目錄 564
專利目錄 610
培養(yǎng)學生簡況 618
后記 635
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